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| PRELIMINARY TECHNICAL DATA a 10.7 Gbps 3.3V LOW NOISE HIGH GAIN TIA WITH PERFORMANCE MONITORS Preliminary Technical Data ADN2820 FEATURES Technology: High Performance SiGe Bandwidth: 9GHz Input Noise Current Density: 11pA/ root Hz Optical sensitivity: -19.3 dBm1 Differential Transimpedance: 5000 V/A Power Dissipation: 250mW Input Current Overload: 2.5mA pk-pk Linear Input Range: 0.12mA pk-pk Output Resistance: 50 / side Output Offset Adjustment Range: 100mV On-Chip Performance Monitors Average Input Power Monitor: 1V/mA AC Input Signal Monitor: 5V/mA (pk-pk) Die Size: 0.87mm x 1.06mm APPLICATIONS 10.7 Gbps Optical Modules SONET/SDH OC-192/STM-64 and 10 GbE Receivers, Transceivers, Transponders 3.3V PRODUCT DESCRIPTION The ADN2820 is a compact, high performance 3.3V power supply SiGe Trans-impedance Amplifier (TIA) optimized for 10Gbps MetroAccess and Ethernet systems. It is a single chip solution for detecting photodiode current with a differential output voltage. The ADN2820 features low input referred noise current and high output trans-impedance gain, capable of driving a typical CDR or transceiver directly. POWMON and SIGMON outputs are provided for input average power and input AC signal monitoring and alarm generation. Low nominal output offset enables DC output coupling to 3.3V circuits. The OFFSET control input enables output slice level adjustment for asymmetric input signals. The ADN2820 operates with a 3.3 Volt power supply and is available in die form. VCC(1,2) 50 RF = 500 h IN(14) 50 a ADN2820 a OUT(5) OUTB(6) BB OFFSET(13) AV=20dB 20mA SIGMON(8) POWMON(3) 0.85V CBYPASS GNDS(11) GND(4,7,10) C LF (9) CLF ADN2820 Functional Block Diagram / Typical Operating Circuit (TOC) TOC) aatDDiDiagram Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, USA Tel: 781/329-4700 World Wide Web Site: www.analog.com Fax: 781/326-8703 Analog Device, Inc. 2002 REV. PrA 05Sept02 -1- PRELIMINARY TECHNICAL DATA A DN2820 ELECTRICAL SPECIFICATIONS Par ameter DYNAMIC PERFORMANCE Bandwidth Total Input RMS Noise Small Signal Transimpedance Group Delay Variation Conditions2 Min Typ Max Units -3dB DC to 9GHz 10MHz 100MHz to 3GHz 100MHz to 3 dB BW CLF=0.1i F 9GHz Pk-Pk, <1dB Gain Compression Pk-Pk, 10-12 BER Pk-Pk diff, IIN,PK- PK =2.0mA IIN,PK-PK =0i A to 200i A 25C, 3.3V 7.5 9 1.05 GHz iA 6000 V/A ps ps 50 -10 kHz dB mA mA V V/mA mV 4000 5000 10 30 20 -12 0.12 2.5 1 5 0 Low Frequency Cut-Off Output Return Loss Linear Input Range Input Overload Current Maximum Output Swing SIGMON Sensitivity SIGMON Offset DC PERFORMANCE Power Dissipation Input Voltage Output Common Mode Voltage Output Impedance Output Offset 250 0.85 DC terminated to Vcc single-ended IIN,AVE < 0.1mA IIN,AVE < 1mA 0.8V < Voffset < 2.8V 0.8V < Voffset < 2.8V IIN,AVE =0mA to 1mA 0.95 -5 -20 100 100 1 10 1.25 Vcc-0.3 50 5 20 mW V V ohms mV mV mV/V mV V/mA mV Offset Adjust Sensitivity Offset Adjust Range POWMON Sensitivity POWMON Offset 1 -12 10 BER, 8dB extinction ratio, 0.85 A/W PIN, responsivity, 1.1 A RMS input referred TIA noise, SNR = 14.1 -12 for a BER of 1x10 2 Photodiode capacitance = 0.22pF 0.04pF, Photodiode resistance = 20 Input wire bond inductance = 0.85nH 0.15nH, Output bond wire inductance = 0.85nH 0.15nH Load impedance = 50 (each output, DC or AC coupled) Min/Max Vcc = +3.3V 0.3V, Tambient = -15 oC to +85oC; Typ Vcc=3.3V, Tambient = +25C -2- REV. PrA 05Sept02 PRELIMINARY TECHNICAL DATA ADN2820 ABSOLUTE MAXIMUM RATINGS3 Supply Voltage (Vcc to Gnd) ........................................................................................TBD Internal Power Dissipation Output Short Circuit Duration ................................................................... Indefinite Maximum Input Current .............................................................................................10 mA Storage Temperature Range ....................................................................... -65oC to +125oC Operating Ambient Temperature Range....................................................... -15oC to +85oC Maximum Junction Temperature...............................................................................+165oC 3 Stresses above those listed under `Absolute Maximum Rating' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SIGNAL CHAIN CONTEXT: 16 ADN2843 LDD FRAMER 16 ADN29xx Mu lti-Rate OC192/STM 64 ADN2820 TIA Tr an sceive r ADN2820 TIA ADN29xxx 21 Mu lti-Rate OC192/STM 64 Tr an sceiver ADN2843 LDD 16 FRAMER 16 PAD DESCRIPTIONS: # 1-2 3 4 5 6 7 8 9 10 11 12 13 14 PAD VCC SIGMON GND OUT OUTB GND POWMON CLF GND GNDS TEST IN OFFSET FUNCTION Positive Supply. Bypass with a 100pF or greater capacitor to GND. Input AC Signal Monitor. Analog signal proportional to AC optical input power. Ground Positive Output. Drives 50ohm termination (AC or DC termination). Negative Output. Drives 50ohm termination (AC or DC termination). Ground Input Average Power Monitor. Analog signal proportional to average (AC+DC) optical input power. Low Frequency Cutoff set point. Connect with a 0.1i F capacitor to GNDS for 20kHz. Ground. Ground Sense. Test Pad. Leave floating. Current Input. Bond directly to reverse biased PIN or APD anode. Offset Adjust Input. REV. PrA 05Sept02 -3- PRELIMINARY TECHNICAL DATA A DN2820 DIE SIZE: 0.870mm x 1.060mm (edge-edge including 3mil scribe) PAD LAYOUT: 1 2 3 14 4 13 5 0,0 12 6 11 PASSIVATION OPENINGS = 0.08mm x 0.08mm 0.12mm x 0.08mm 0.08mm x 0.12mm 10 9 8 sfasdf 7 PAD COORDINATES: # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PAD VCC VCC SIGMON GND OUT OUTB GND POWMON CLF GND GNDS TEST IN OFFSET X -0.20mm 0.00mm 0.20mm 0.35mm 0.35mm 0.35mm 0.35mm 0.20mm 0.00mm -0.20mm -0.35mm -0.35mm -0.35mm -0.35mm Y 0.45mm 0.45mm 0.45mm 0.30mm 0.10mm -0.10mm -0.30mm -0.45mm -0.45mm -0.45mm -0.30mm -0.10mm 0.10mm 0.30mm -4- REV. PrA 05Sept02 |
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